Enviar artigo por via de e-mail Determination of the width of the silicon carbide forbidden zone by the optical method
- Autores: Yevishev A.V., Ivenin S.V.
- Edição: Volume 2, Nº 22 (2014)
- Seção: Articles
- ##submission.dateSubmitted##: 09.05.2025
- ##submission.dateAccepted##: 09.05.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/290864
- ID: 290864
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Resumo
The article presents the results of determination of the width of the silicon carbide forbidden zone by the optical method. The spectrophotometer SF-46 was used. The samples of silicon carbide were of different polytypes and had different types of conductivity. Also different methods (Lely and LETI) were used to obtain the samples tested.
Sobre autores
A. Yevishev
Autor responsável pela correspondência
Email: ogarevonline@yandex.ru
Rússia
S. Ivenin
Email: ogarevonline@yandex.ru
Rússia
Bibliografia
- Павлов Л. П. Методы измерения параметров полупроводниковых материалов. – М.: Высш. шк., 1987. – 239 с.
- Уханов Ю. И. Оптические свойства полупроводников. – М.: Наука, 1977. – 366 с.
- Панков Ж. Оптические процессы в полупроводниках. – М.: Мир, 1973. – 458 с.
- Добролеж С. А., Зубкова С. М., Кравец В. А. Карбид кремния. – Киев: Гос. изд-во техн. лит. УССР, 1963. – 316 с.
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