Vol 2, No 22 (2014)
- Year: 2014
- Published: 30.11.2014
- Articles: 10
- URL: https://ogarev-online.ru/2311-2468/issue/view/19174
Full Issue
To the feasibility study of power effective adjustable electric drives
Abstract
The article shows the importance of feasibility study in the designing and introducing of the adjustable electric drive. In this connection, the author analyzes the stages of a feasibility study: the basic machine calculation; the designing of control system; the electric drive introduction.
Complex equipment for university laboratories to study the elements of industrial automation systems
Abstract
The article considers the approaches to acquiring laboratory equipment to study the elements of industrial automation systems. Particularly, the article focuses on the complex of laboratory stands based on the equipment by "OVEN" and "Siemens" companies.
Determination of the width of the silicon carbide forbidden zone by the optical method
Abstract
The article presents the results of determination of the width of the silicon carbide forbidden zone by the optical method. The spectrophotometer SF-46 was used. The samples of silicon carbide were of different polytypes and had different types of conductivity. Also different methods (Lely and LETI) were used to obtain the samples tested.
Modeling of the influence of thyristor model parameters on its switching losses in the current inverter circuit
Abstract
The software "Saber" was used to study the dependence of the carrier lifetime in the thyristor drift-regions on its switching power losses in the current invertor circuits with serial connection. The influence of the reverse recovery charge and carrier lifetime dispersion in the thyristors with serial connection on the switching losses was studied. The thyristor relative overheat connected to the dispersion of parameters was calculated.
High-speed and high-voltage GaAs diodes for power electronics
Abstract
The article presents the research results of relatively new semiconductor devices ‒ high-speed and high-voltage GaAs p-i-n-diodes for high-performance power electronics. The authors consider the general technical requirements for high-speed and high-voltage GaAs p-i-n-diodes as well as the basic electrical characteristics of experimental GaAs p-i-n-diodes.