Email this article Determination of the width of the silicon carbide forbidden zone by the optical method
- Authors: Yevishev A.V., Ivenin S.V.
- Issue: Vol 2, No 22 (2014)
- Section: Articles
- Submitted: 09.05.2025
- Accepted: 09.05.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/290864
- ID: 290864
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Abstract
The article presents the results of determination of the width of the silicon carbide forbidden zone by the optical method. The spectrophotometer SF-46 was used. The samples of silicon carbide were of different polytypes and had different types of conductivity. Also different methods (Lely and LETI) were used to obtain the samples tested.
About the authors
A. V. Yevishev
Author for correspondence.
Email: ogarevonline@yandex.ru
Russian Federation
S. V. Ivenin
Email: ogarevonline@yandex.ru
Russian Federation
References
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- Уханов Ю. И. Оптические свойства полупроводников. – М.: Наука, 1977. – 366 с.
- Панков Ж. Оптические процессы в полупроводниках. – М.: Мир, 1973. – 458 с.
- Добролеж С. А., Зубкова С. М., Кравец В. А. Карбид кремния. – Киев: Гос. изд-во техн. лит. УССР, 1963. – 316 с.
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