Stability criterion for semiconductor superlattice
- Authors: Alekseev K.N., Prudskikh N.S., Shorokhov A.V.
- Issue: Vol 2, No S3 (2014)
- Pages: 58-63
- Section: Articles
- Submitted: 02.12.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/355243
- ID: 355243
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Abstract
The paper considers the stability criterion of the gain of high-frequency electromagnetic radiation in semiconductor superlattice with miniband transport mode in the standard gaining scheme. The study shows that the Ohmic boundary condition gives the criterion different from the one connected with the negative different conductivity (NDC). It gives hope to get the stable gain in some region of NDC under certain system parameters.
About the authors
Kirill Nikolaevich Alekseev
Author for correspondence.
Email: ogarevonline@yandex.ru
Russian Federation
Natalia Sergeevna Prudskikh
Email: ogarevonline@yandex.ru
Russian Federation
Alexey Vladimirovich Shorokhov
Email: ogarevonline@yandex.ru
Russian Federation
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