Stability criterion for semiconductor superlattice
- Autores: Alekseev K.N., Prudskikh N.S., Shorokhov A.V.
- Edição: Volume 2, Nº S3 (2014)
- Páginas: 58-63
- Seção: Articles
- ##submission.dateSubmitted##: 02.12.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/355243
- ID: 355243
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The paper considers the stability criterion of the gain of high-frequency electromagnetic radiation in semiconductor superlattice with miniband transport mode in the standard gaining scheme. The study shows that the Ohmic boundary condition gives the criterion different from the one connected with the negative different conductivity (NDC). It gives hope to get the stable gain in some region of NDC under certain system parameters.
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Kirill Alekseev
Autor responsável pela correspondência
Email: ogarevonline@yandex.ru
Rússia
Natalia Prudskikh
Email: ogarevonline@yandex.ru
Rússia
Alexey Shorokhov
Email: ogarevonline@yandex.ru
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