Email this article Rapid thermal oxidation of silicon carbide
- Authors: Ivenin S.V., Krestynskov F.Y.
- Issue: Vol 2, No 3 (2014)
- Section: Статьи
- Submitted: 03.05.2025
- Accepted: 03.05.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/290425
- ID: 290425
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Abstract
The article considers the peculiarities of the process of silicon carbide thermal oxidation. Particularly, the authors focus on the low growth rate of oxide film on the surface of silicon carbide. In this connection the methods of rapid oxidation of silicon carbide plates are considered.
About the authors
S. V. Ivenin
Author for correspondence.
Email: ogarevonline@yandex.ru
Russian Federation
F. Yu. Krestynskov
Email: ogarevonline@yandex.ru
Russian Federation
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