Email this article Parameter definition of thermal self-impedances of IGBT module power devices
- Authors: Vilkov E.A., Ilyin M.V.
- Issue: Vol 7, No 11 (2019)
- Section: Articles
- Submitted: 07.04.2025
- Accepted: 07.04.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/286742
- ID: 286742
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Abstract
The article considers the thermal model of IGBT module based on the discrete representation of transistors and diodes. The authors propose an approach to definition of thermal self-impedances of power devices of IGBT module for the formation of a thermal model by electrothermal analogy. This model considers the dependence of thermal resistance and thermal capacity of power device on its location in the module.
About the authors
E. A. Vilkov
Author for correspondence.
Email: ogarevonline@yandex.ru
Russian Federation
M. V. Ilyin
Email: ogarevonline@yandex.ru
Russian Federation
References
- Ilyin M., Bobrov M., Lapshina V., Briz F., Anuchin A. Analysis of the influence of the switching strategy on the IGBTs temperature in AC drives // 2016 57th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON). – Riga, 2016. – P. 1–6.
- Ilyin M., Popov A., Briz F., Gulyaev I. On-line temperature monitoring of power modules in AC drives // 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). – Warsaw, 2017. – P. 1–10.
- Thermal Equivalent Model of IGBT Modules 12th Mar.’15 LD-ES-150379 © Hitachi Power Semiconductor Device Ltd. – 2015.
- Bahman A., Ma K., Blaabjerg F. A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules // IEEE Transactions on Power Electronics. – 2018. – P. 2518–2530.
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