电邮这篇文章 Parameter definition of thermal self-impedances of IGBT module power devices
- 作者: Vilkov E.A., Ilyin M.V.
- 期: 卷 7, 编号 11 (2019)
- 栏目: Articles
- ##submission.dateSubmitted##: 07.04.2025
- ##submission.dateAccepted##: 07.04.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/286742
- ID: 286742
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详细
The article considers the thermal model of IGBT module based on the discrete representation of transistors and diodes. The authors propose an approach to definition of thermal self-impedances of power devices of IGBT module for the formation of a thermal model by electrothermal analogy. This model considers the dependence of thermal resistance and thermal capacity of power device on its location in the module.
作者简介
E. Vilkov
编辑信件的主要联系方式.
Email: ogarevonline@yandex.ru
俄罗斯联邦
M. Ilyin
Email: ogarevonline@yandex.ru
俄罗斯联邦
参考
- Ilyin M., Bobrov M., Lapshina V., Briz F., Anuchin A. Analysis of the influence of the switching strategy on the IGBTs temperature in AC drives // 2016 57th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON). – Riga, 2016. – P. 1–6.
- Ilyin M., Popov A., Briz F., Gulyaev I. On-line temperature monitoring of power modules in AC drives // 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). – Warsaw, 2017. – P. 1–10.
- Thermal Equivalent Model of IGBT Modules 12th Mar.’15 LD-ES-150379 © Hitachi Power Semiconductor Device Ltd. – 2015.
- Bahman A., Ma K., Blaabjerg F. A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules // IEEE Transactions on Power Electronics. – 2018. – P. 2518–2530.
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