The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films
- Авторы: Kiselev D.A.1,2, Levashov S.A.1, Sivov A.A.1, Chucheva G.V.1, Afanasiev M.S.1
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Учреждения:
- Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- National University of Science and Technology MISiS
- Выпуск: Том 61, № 10 (2019)
- Страницы: 1910-1914
- Раздел: Physics of Surface and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/206389
- DOI: https://doi.org/10.1134/S1063783419100032
- ID: 206389
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Аннотация
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
Об авторах
D. Kiselev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS
Email: gvc@ms.ire.rssi.ru
Россия, Fryazino, 141190; Moscow, 119049
S. Levashov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Россия, Fryazino, 141190
A. Sivov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Россия, Fryazino, 141190
G. Chucheva
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: gvc@ms.ire.rssi.ru
Россия, Fryazino, 141190
M. Afanasiev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Россия, Fryazino, 141190
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