Pesquisa

Edição
Título
Autores
Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution
Grashchenko A., Kukushkin S., Osipov A.
Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)
Pezoldt J., Lubov M., Kharlamov V.
Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films
Sergeeva O., Solnyshkin A., Kiselev D., Il’ina T., Kukushkin S., Sharofidinov S., Kaptelov E., Pronin I.
A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates
Kukushkin S., Sharofidinov S.
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
Mizerov A., Kukushkin S., Sharofidinov S., Osipov A., Timoshnev S., Shubina K., Berezovskaya T., Mokhov D., Buravlev A.
Interatomic interactions at interfaces of multilayered nanostructures (Co45Fe45Zr10/a-Si)40 and (Co45Fe45Zr10/SiO2)32
Domashevskaya E., Terekhov V., Turishchev S., Spirin D., Chernyshev A., Kalinin Y., Sitnikov A.
Aromatic-Like Carbon Nanostructures Created on the Vicinal SiC Surfaces
Benemanskaya G., Kukushkin S., Timoshnev S.
Change in the Thermodynamic Properties of a Si–Ge Solid Solution at a Decrease of the Nanocrystal Size
Magomedov M.
Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon
Kukushkin S., Osipov A.
Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum
Kotousova I., Lebedev S., Lebedev A., Bulat P.
Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review)
Talanin V., Talanin I.
Effect of Solid-State Epitaxial Recrystallization on Defect Density in Ultrathin Silicon-on-Sapphire Layers
Fedotov S., Statsenko V., Egorov N., Golubkov S.
Acoustic and Electromagnetic Emissions at Impact Damage of Super Hard SiC and MgAl2O4 Ceramics
Kadomtsev A., Gol’eva E., Dunaev A., Chmel’ A., Shcherbakov I.
Surface morphological instability of silicon (100) crystals under microwave ion physical etching
Yafarov R., Shanygin V.
Microstructure of Si Crystals Subjected to Irradiation with High-Energy H+ Ions and Heat Treatment by High-Resolution Three-Crystal X-Ray Diffraction and Transmission Electron Microscopy
Asadchikov V., D’yachkova I., Zolotov D., Chukhovskii F., Sorokin L.
Effect of low electrical potentials on the microhardness of metallic materials
Orlova D., Danilov V., Zuev L., Staskevich O.
Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal
Kukushkin S., Osipov A.
Traps in the Nanocomposite Layer of Silicon–Silicon Dioxide and Their Effect on the Luminescent Properties
Dement’ev P., Ivanova E., Zamoryanskaya M.
Techniques for Polytypic Transformations in Silicon Carbide
Kukushkin S., Osipov A.
Dependence of Properties of Variable Gradient Porous Structures of Silicon on the Method of Formation
Rubtsova K., Silina M.
On Change in the Silicon Crystal Structure Implanted with Hydrogen Ions during Annealing Based on Three-Crystal X-Ray Diffractometry Data
Asadchikov V., D’yachkova I., Zolotov D., Chukhovskii F., Sorokin L.
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