Email this article The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films
- Authors: Kiselev D.A.1,2, Levashov S.A.1, Sivov A.A.1, Chucheva G.V.1, Afanasiev M.S.1
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Affiliations:
- Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- National University of Science and Technology MISiS
- Issue: Vol 61, No 10 (2019)
- Pages: 1910-1914
- Section: Physics of Surface and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/206389
- DOI: https://doi.org/10.1134/S1063783419100032
- ID: 206389
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Abstract
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
About the authors
D. A. Kiselev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, 141190; Moscow, 119049
S. A. Levashov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, 141190
A. A. Sivov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, 141190
G. V. Chucheva
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, 141190
M. S. Afanasiev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, 141190
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