The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films


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In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.

作者简介

D. Kiselev

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS

Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190; Moscow, 119049

S. Levashov

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190

A. Sivov

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190

G. Chucheva

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190

M. Afanasiev

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190

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