The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films
- 作者: Kiselev D.A.1,2, Levashov S.A.1, Sivov A.A.1, Chucheva G.V.1, Afanasiev M.S.1
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隶属关系:
- Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- National University of Science and Technology MISiS
- 期: 卷 61, 编号 10 (2019)
- 页面: 1910-1914
- 栏目: Physics of Surface and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/206389
- DOI: https://doi.org/10.1134/S1063783419100032
- ID: 206389
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详细
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
作者简介
D. Kiselev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190; Moscow, 119049
S. Levashov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190
A. Sivov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190
G. Chucheva
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190
M. Afanasiev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, 141190
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