The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films


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Аннотация

In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.

Авторлар туралы

D. Kiselev

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS

Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190; Moscow, 119049

S. Levashov

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190

A. Sivov

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190

G. Chucheva

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190

M. Afanasiev

Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences

Email: gvc@ms.ire.rssi.ru
Ресей, Fryazino, 141190

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