Enviar artigo por via de e-mail The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films
- Autores: Kiselev D.A.1,2, Levashov S.A.1, Sivov A.A.1, Chucheva G.V.1, Afanasiev M.S.1
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Afiliações:
- Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- National University of Science and Technology MISiS
- Edição: Volume 61, Nº 10 (2019)
- Páginas: 1910-1914
- Seção: Physics of Surface and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/206389
- DOI: https://doi.org/10.1134/S1063783419100032
- ID: 206389
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Resumo
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
Sobre autores
D. Kiselev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences; National University of Science and Technology MISiS
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190; Moscow, 119049
S. Levashov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190
A. Sivov
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190
G. Chucheva
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190
M. Afanasiev
Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Rússia, Fryazino, 141190
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