Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
- 作者: Tarasova E.A.1, Obolensky S.V.1, Galkin O.E.1, Hananova A.V.1, Makarov A.B.1
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隶属关系:
- Lobachevsky State University of Nizhny Novgorod
- 期: 卷 51, 编号 11 (2017)
- 页面: 1490-1494
- 栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://ogarev-online.ru/1063-7826/article/view/201754
- DOI: https://doi.org/10.1134/S1063782617110264
- ID: 201754
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详细
A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 1014 cm–2 is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.
作者简介
E. Tarasova
Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: thelen@yandex.ru
俄罗斯联邦, Nizhny Novgorod, 603600
S. Obolensky
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
俄罗斯联邦, Nizhny Novgorod, 603600
O. Galkin
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
俄罗斯联邦, Nizhny Novgorod, 603600
A. Hananova
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
俄罗斯联邦, Nizhny Novgorod, 603600
A. Makarov
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
俄罗斯联邦, Nizhny Novgorod, 603600
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