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Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S., Sokolov E., Statsenko V., Romashkin A., Timoshenkov S.
Lifetime of excitons localized in Si nanocrystals in amorphous silicon
Gusev O., Belolipetskiy A., Yassievich I., Kukin A., Terukova E., Terukov E.
Production of Silicon Nanoparticles for Use in Solar Cells
Gribov B., Zinov’ev K., Kalashnik O., Gerasimenko N., Smirnov D., Sukhanov V., Kononov N., Dorofeev S.
Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters
Terekhov V., Terukov E., Undalov Y., Parinova E., Spirin D., Seredin P., Minakov D., Domashevskaya E.
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion
Ken O., Levitskii V., Yavsin D., Gurevich S., Davydov V., Sreseli O.
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon
Samosvat D., Chikalova-Luzina O., Zegrya G.
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Mizerov A., Arsentyev I., Leiste H., Rinke M.
Analysis of the Features of Hot-Carrier Degradation in FinFETs
Makarov A., Tyaginov S., Kaczer B., Jech M., Chasin A., Grill A., Hellings G., Vexler M., Linten D., Grasser T.
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure
Vexler M., Grekhov I.
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon
Chubenko E., Redko S., Sherstnyov A., Petrovich V., Kotov D., Bondarenko V.
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
Cherkova S., Skuratov V., Volodin V.
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition
Uvarov A., Zelentsov K., Gudovskikh A.
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)
Undalov Y., Terukov E., Trapeznikova I.
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties
Detochenko A., Denisov S., Drozdov M., Mashin A., Gavva V., Bulanov A., Nezhdanov A., Ezhevskii A., Stepikhova M., Chalkov V., Trushin V., Shengurov D., Shengurov V., Abrosimov N., Riemann H.
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
Egorkin V., Zemlyakov V., Nezhentsev A., Gudkov V., Garmash V.
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles
Kurdyukov D., Feoktistov N., Kirilenko D., Smirnov A., Davydov V., Golubev V.
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
Teplyakov M., Ken O., Goryachev D., Sreseli O.
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
Alpatov A., Vikhrov S., Kazanskii A., Lyaskovskii V., Rybin N., Rybina N., Forsh P.
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries
Astrova E., Li G., Rumyantsev A., Zhdanov V.
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates
Timoshnev S., Mizerov A., Lapushkin M., Kukushkin S., Bouravleuv A.
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles
Sobolev M., Yavsin D., Gurevich S.
Nanostructured ITO/SiO2 Coatings
Markov L., Pavluchenko A., Smirnova I.
Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
Shiryaev A., Vorotyntsev V., Shobolov E.
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
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