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Vol 52, No 15 (2018)
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I.
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(Eng)
Vol 53, No 13 (2019)
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells
Chen X., Zhao B., Li S.
PDF
(Eng)
Vol 52, No 12 (2018)
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects
Kozlovski V.V., Lebedev A.A., Davydovskaya K.S., Lyubimova Y.V.
PDF
(Eng)
Vol 53, No 13 (2019)
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications
Chugh N., Kumar M., Bhattacharya M., Gupta R.S.
PDF
(Eng)
Vol 52, No 12 (2018)
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes
Ivanov P.A., Samsonova T.P., Potapov A.S.
PDF
(Eng)
Vol 53, No 12 (2019)
Edge Doping in Graphene Devices on SiO2 Substrates
Vasilyeva G.Y., Smirnov D., Vasilyev Y.B., Greshnov A.A., Haug R.J.
PDF
(Eng)
Vol 50, No 13 (2016)
Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation
Levin D.D., Bobrinetskiy I.I., Emelianov A.V., Nevolin V.K., Romashkin A.V., Petuhov V.A.
PDF
(Eng)
Vol 53, No 10 (2019)
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates
Novikov A.V., Yurasov D.V., Baidakova N.A., Bushuykin P.A., Andreev B.A., Yunin P.A., Drozdov M.N., Yablonskiy A.N., Kalinnikov M.A., Krasilnik Z.F.
PDF
(Eng)
Vol 50, No 4 (2016)
Specific features of doping with antimony during the ion-beam crystallization of silicon
Pashchenko A.S., Chebotarev S.N., Lunin L.S., Irkha V.A.
PDF
(Eng)
Vol 53, No 9 (2019)
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov D.S., Shengurov V.G., Denisov S.A., Filatov D.O., Zdoroveishev A.V., Chalkov V.Y., Zaitsev A.V., Ved’ M.V., Dorokhin M.V., Baidakova N.A.
PDF
(Eng)
Vol 50, No 3 (2016)
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
Levinshtein M.E., Mnatsakanov T.T., Yurkov S.N., Tandoev A.G., Ryu S., Palmour J.W.
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(Eng)
Vol 53, No 9 (2019)
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A.M., Timoshnev S.N., Nikitina E.V., Sobolev M.S., Shubin K.Y., Berezovskaia T.N., Mokhov D.V., Lundin W.V., Nikolaev A.E., Bouravleuv A.D.
PDF
(Eng)
Vol 50, No 3 (2016)
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
PDF
(Eng)
Vol 53, No 9 (2019)
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique
Dorokhin M.V., Demina P.B., Erofeeva I.V., Zdoroveyshchev A.V., Kuznetsov Y.M., Boldin M.S., Popov A.A., Lantsev E.A., Boryakov A.V.
PDF
(Eng)
1 - 14 of 14 Items

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