Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications
- Авторы: Chugh N.1, Kumar M.1, Bhattacharya M.2, Gupta R.S.3
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Учреждения:
- University School of Information, Communication and Technology, Guru Gobind Singh Indraprastha University
- Department of Electronics, Acharya Narendra Dev College
- Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology
- Выпуск: Том 53, № 13 (2019)
- Страницы: 1784-1791
- Раздел: Physics of Semiconductor Devices
- URL: https://ogarev-online.ru/1063-7826/article/view/207459
- DOI: https://doi.org/10.1134/S1063782619130050
- ID: 207459
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Аннотация
A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement.
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Nisha Chugh
University School of Information, Communication and Technology, Guru Gobind Singh Indraprastha University
Автор, ответственный за переписку.
Email: nishachugh0711@gmail.com
Индия, Dwarka, New Delhi, 110078
Manoj Kumar
University School of Information, Communication and Technology, Guru Gobind Singh Indraprastha University
Автор, ответственный за переписку.
Email: manojtaleja@ipu.ac.in
Индия, Dwarka, New Delhi, 110078
Monika Bhattacharya
Department of Electronics, Acharya Narendra Dev College
Автор, ответственный за переписку.
Email: monika.bhattacharya86@gmail.com
Индия, Kalkaji, New Delhi, 110019
R. Gupta
Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology
Автор, ответственный за переписку.
Email: rsgupta1943@gmail.com
Индия, Sector-22, Rohini, New Delhi, 110086
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