Edição |
Título |
Arquivo |
Volume 53, Nº 13 (2019) |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
 (Eng)
|
Chugh N., Kumar M., Bhattacharya M., Gupta R.
|
Volume 53, Nº 13 (2019) |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
 (Eng)
|
Chen X., Zhao B., Li S.
|
Volume 53, Nº 13 (2019) |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
 (Eng)
|
Patel S., Kumar D., Chaurasiya N., Tripathi S.
|
Volume 53, Nº 13 (2019) |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
 (Eng)
|
Shrey Arvind Singh ., Shweta Tripathi .
|
Volume 53, Nº 12 (2019) |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
 (Eng)
|
Torkhov N., Babak L., Kokolov A.
|
Volume 53, Nº 12 (2019) |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
 (Eng)
|
Nadtochiy A., Shchukin V., Cherkashin N., Denneulin T., Zhukov A., Maximov M., Gordeev N., Payusov A., Kulagina M., Shernyakov Y., Ledentsov N.
|
Volume 53, Nº 12 (2019) |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
 (Eng)
|
Karlina L., Vlasov A., Shvarts M., Soshnikov I., Smirnova I., Komissarenko F., Ankudinov A.
|
Volume 53, Nº 12 (2019) |
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |
 (Eng)
|
Dikareva N., Zvonkov B., Samartsev I., Nekorkin S., Baidus N., Dubinov A.
|
Volume 53, Nº 11 (2019) |
High-Voltage AlInGaN LED Chips |
 (Eng)
|
Markov L., Kukushkin M., Pavlyuchenko A., Smirnova I., Itkinson G., Osipov O.
|
Volume 53, Nº 11 (2019) |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
 (Eng)
|
Mintairov M., Evstropov V., Mintairov S., Shvarts M., Kalyuzhnyy N.
|
Volume 53, Nº 10 (2019) |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
 (Eng)
|
Gordeev N., Payusov A., Maximov M.
|
Volume 53, Nº 10 (2019) |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
 (Eng)
|
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
|
Volume 53, Nº 8 (2019) |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
 (Eng)
|
Blokhin S., Kulagina M., Guseva Y., Mintairov S., Kalyuzhnyy N., Mozharov A., Zubov F., Maximov M., Zhukov A., Moiseev E., Kryzhanovskaya N.
|
Volume 53, Nº 8 (2019) |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
 (Eng)
|
Blokhin S., Bobrov M., Blokhin A., Kuzmenkov A., Maleev N., Ustinov V., Kolodeznyi E., Rochas S., Babichev A., Novikov I., Gladyshev A., Karachinsky L., Denisov D., Voropaev K., Ionov A., Egorov A.
|
Volume 53, Nº 8 (2019) |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
 (Eng)
|
Khvostikov V., Kalyuzhnyy N., Mintairov S., Potapovich N., Sorokina S., Shvarts M.
|
Volume 53, Nº 8 (2019) |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
 (Eng)
|
Abolmasov S., Abramov A., Semenov A., Shakhray I., Terukov E., Malchukova E., Trapeznikova I.
|
Volume 53, Nº 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
 (Eng)
|
Kyuregyan A.
|
Volume 53, Nº 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
 (Eng)
|
Kyuregyan A.
|
Volume 53, Nº 7 (2019) |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
 (Eng)
|
Korolkov O., Kozlovski V., Lebedev A., Sleptsuk N., Toompuu J., Rang T.
|
Volume 53, Nº 6 (2019) |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
 (Eng)
|
Romanov V., Belykh I., Ivanov E., Alekseev P., Il’inskaya N., Yakovlev Y.
|
Volume 53, Nº 6 (2019) |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
 (Eng)
|
Podoskin A., Romanovich D., Shashkin I., Gavrina P., Sokolova Z., Slipchenko S., Pikhtin N.
|
Volume 53, Nº 6 (2019) |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
 (Eng)
|
Banshchikov A., Illarionov Y., Vexler M., Wachter S., Sokolov N.
|
Volume 53, Nº 6 (2019) |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
 (Eng)
|
Shashkina A., Hanin S.
|
Volume 53, Nº 6 (2019) |
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |
 (Eng)
|
Kalinina E., Violina G., Nikitina I., Yagovkina M., Ivanova E., Zabrodski V.
|
Volume 53, Nº 6 (2019) |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
 (Eng)
|
Ivanov P., Kudoyarov M., Potapov A., Samsonova T.
|
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