XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017

Issue Title File
Vol 52, No 1 (2018) GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases PDF
(Eng)
Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
Vol 52, No 1 (2018) Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field PDF
(Eng)
Chernenko A.V., Brichkin A.S., Novikov S.I., Schneider C., Hoefling S.
Vol 52, No 1 (2018) Electron Effective Mass and g Factor in Wide HgTe Quantum Wells PDF
(Eng)
Gudina S.V., Neverov V.N., Ilchenko E.V., Bogolubskii A.S., Harus G.I., Shelushinina N.G., Podgornykh S.M., Yakunin M.V., Mikhailov N.N., Dvoretsky S.A.
Vol 52, No 1 (2018) Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires PDF
(Eng)
Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kakko J.P., Lipsanen H.
Vol 51, No 12 (2017) On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation PDF
(Eng)
Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Krishtopenko S.S., Aleshkin V.Y., Kadykov A.M., Orlita M., Potemski M., Gavrilenko V.I., Morozov S.V., Dvoretsky S.A., Mikhailov N.N.
Vol 51, No 12 (2017) Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen PDF
(Eng)
Bushuykin P.A., Novikov A.V., Andreev B.A., Lobanov D.N., Yunin P.A., Skorokhodov E.V., Krasil’nikova L.V., Demidov E.V., Savchenko G.M., Davydov V.Y.
Vol 51, No 12 (2017) Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells PDF
(Eng)
Baidakova N.A., Verbus V.A., Morozova E.E., Novikov A.V., Skorohodov E.V., Shaleev M.V., Yurasov D.V., Hombe A., Kurokawa Y., Usami N.
Vol 51, No 12 (2017) Manifestation of PT symmetry in the exciton spectra of quantum wells PDF
(Eng)
Kochereshko V.P., Kotova L.V., Khakhalin I.S., Cox R.T., Mariette H., Andre R., Bukari H., Ivanov S.V.
Vol 51, No 12 (2017) Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations PDF
(Eng)
Yurasov D.V., Drozdov M.N., Shmagin V.B., Novikov A.V.
Vol 51, No 12 (2017) Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission PDF
(Eng)
Rumyantsev V.V., Kadykov A.M., Fadeev M.A., Dubinov A.A., Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
Vol 51, No 12 (2017) Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential PDF
(Eng)
Bovkun L.S., Ikonnikov A.V., Aleshkin V.Y., Krishtopenko S.S., Antonov A.V., Spirin K.E., Mikhailov N.N., Dvoretsky S.A., Gavrilenko V.I.
Vol 51, No 11 (2017) Optimization of the superlattice parameters for THz diodes PDF
(Eng)
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Obolenskaya E.S., Obolensky S.V., Ustinov V.M.
Vol 51, No 11 (2017) Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films PDF
(Eng)
Akimov A.N., Klimov A.E., Suprun S.P., Epov V.S.
Vol 51, No 11 (2017) On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors PDF
(Eng)
Aleshkin V.Y., Gavrilenko L.V.
Vol 51, No 11 (2017) Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition PDF
(Eng)
Akimov A.N., Klimov A.E., Paschin N.S., Yaroshevich A.S., Savchenko M.L., Epov V.S., Fedosenko E.V.
Vol 51, No 11 (2017) Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon PDF
(Eng)
Okhapkin A.I., Korolyov S.A., Yunin P.A., Drozdov M.N., Kraev S.A., Khrykin O.I., Shashkin V.I.
Vol 51, No 11 (2017) Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates PDF
(Eng)
Baidus N.V., Aleshkin V.Y., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Novikov A.V., Pavlov D.A., Rykov A.V., Sushkov A.A., Shaleev M.V., Yunin P.A., Yurasov D.V., Yablonskiy A.N., Krasilnik Z.F.
Vol 51, No 11 (2017) Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures PDF
(Eng)
Alexeev A.N., Mamaev V.V., Petrov S.I.
Vol 51, No 11 (2017) Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures PDF
(Eng)
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Nezhdanov A.V., Pashen’kin I.Y.
Vol 51, No 11 (2017) Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection PDF
(Eng)
Polischuk O.V., Fateev D.V., Popov V.V.
Vol 51, No 11 (2017) Optical thyristor based on GaAs/InGaP materials PDF
(Eng)
Zvonkov B.N., Baidus N.V., Nekorkin S.M., Vikhrova O.V., Zdoroveyshev A.V., Kudrin A.V., Kotomina V.E.
Vol 51, No 11 (2017) Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons PDF
(Eng)
Zabavichev I.Y., Potekhin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
Vol 51, No 11 (2017) Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots PDF
(Eng)
Gorshkov A.P., Volkova N.S., Voronin P.G., Zdoroveyshchev A.V., Istomin L.A., Pavlov D.A., Usov Y.V., Levichev S.B.
Vol 51, No 11 (2017) MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate PDF
(Eng)
Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E.
Vol 51, No 11 (2017) Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity PDF
(Eng)
Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
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