Issue |
Title |
File |
Vol 52, No 1 (2018) |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
 (Eng)
|
Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
|
Vol 52, No 1 (2018) |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
 (Eng)
|
Chernenko A.V., Brichkin A.S., Novikov S.I., Schneider C., Hoefling S.
|
Vol 52, No 1 (2018) |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
 (Eng)
|
Gudina S.V., Neverov V.N., Ilchenko E.V., Bogolubskii A.S., Harus G.I., Shelushinina N.G., Podgornykh S.M., Yakunin M.V., Mikhailov N.N., Dvoretsky S.A.
|
Vol 52, No 1 (2018) |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
 (Eng)
|
Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kakko J.P., Lipsanen H.
|
Vol 51, No 12 (2017) |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
 (Eng)
|
Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Krishtopenko S.S., Aleshkin V.Y., Kadykov A.M., Orlita M., Potemski M., Gavrilenko V.I., Morozov S.V., Dvoretsky S.A., Mikhailov N.N.
|
Vol 51, No 12 (2017) |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
 (Eng)
|
Bushuykin P.A., Novikov A.V., Andreev B.A., Lobanov D.N., Yunin P.A., Skorokhodov E.V., Krasil’nikova L.V., Demidov E.V., Savchenko G.M., Davydov V.Y.
|
Vol 51, No 12 (2017) |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
 (Eng)
|
Baidakova N.A., Verbus V.A., Morozova E.E., Novikov A.V., Skorohodov E.V., Shaleev M.V., Yurasov D.V., Hombe A., Kurokawa Y., Usami N.
|
Vol 51, No 12 (2017) |
Manifestation of PT symmetry in the exciton spectra of quantum wells |
 (Eng)
|
Kochereshko V.P., Kotova L.V., Khakhalin I.S., Cox R.T., Mariette H., Andre R., Bukari H., Ivanov S.V.
|
Vol 51, No 12 (2017) |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
 (Eng)
|
Yurasov D.V., Drozdov M.N., Shmagin V.B., Novikov A.V.
|
Vol 51, No 12 (2017) |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
 (Eng)
|
Rumyantsev V.V., Kadykov A.M., Fadeev M.A., Dubinov A.A., Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
|
Vol 51, No 12 (2017) |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
 (Eng)
|
Bovkun L.S., Ikonnikov A.V., Aleshkin V.Y., Krishtopenko S.S., Antonov A.V., Spirin K.E., Mikhailov N.N., Dvoretsky S.A., Gavrilenko V.I.
|
Vol 51, No 11 (2017) |
Optimization of the superlattice parameters for THz diodes |
 (Eng)
|
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Obolenskaya E.S., Obolensky S.V., Ustinov V.M.
|
Vol 51, No 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
 (Eng)
|
Akimov A.N., Klimov A.E., Suprun S.P., Epov V.S.
|
Vol 51, No 11 (2017) |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
 (Eng)
|
Aleshkin V.Y., Gavrilenko L.V.
|
Vol 51, No 11 (2017) |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
 (Eng)
|
Akimov A.N., Klimov A.E., Paschin N.S., Yaroshevich A.S., Savchenko M.L., Epov V.S., Fedosenko E.V.
|
Vol 51, No 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
 (Eng)
|
Okhapkin A.I., Korolyov S.A., Yunin P.A., Drozdov M.N., Kraev S.A., Khrykin O.I., Shashkin V.I.
|
Vol 51, No 11 (2017) |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
 (Eng)
|
Baidus N.V., Aleshkin V.Y., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Novikov A.V., Pavlov D.A., Rykov A.V., Sushkov A.A., Shaleev M.V., Yunin P.A., Yurasov D.V., Yablonskiy A.N., Krasilnik Z.F.
|
Vol 51, No 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
 (Eng)
|
Alexeev A.N., Mamaev V.V., Petrov S.I.
|
Vol 51, No 11 (2017) |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
 (Eng)
|
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Nezhdanov A.V., Pashen’kin I.Y.
|
Vol 51, No 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
 (Eng)
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
Vol 51, No 11 (2017) |
Optical thyristor based on GaAs/InGaP materials |
 (Eng)
|
Zvonkov B.N., Baidus N.V., Nekorkin S.M., Vikhrova O.V., Zdoroveyshev A.V., Kudrin A.V., Kotomina V.E.
|
Vol 51, No 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
 (Eng)
|
Zabavichev I.Y., Potekhin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
Vol 51, No 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
 (Eng)
|
Gorshkov A.P., Volkova N.S., Voronin P.G., Zdoroveyshchev A.V., Istomin L.A., Pavlov D.A., Usov Y.V., Levichev S.B.
|
Vol 51, No 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
 (Eng)
|
Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E.
|
Vol 51, No 11 (2017) |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
 (Eng)
|
Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
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