| 期 |
标题 |
文件 |
| 卷 52, 编号 1 (2018) |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
(Eng)
|
|
Shtrom I., Sibirev N., Ubiivovk E., Samsonenko Y., Khrebtov A., Reznik R., Bouravleuv A., Cirlin G.
|
| 卷 52, 编号 1 (2018) |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
(Eng)
|
|
Chernenko A., Brichkin A., Novikov S., Schneider C., Hoefling S.
|
| 卷 52, 编号 1 (2018) |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
(Eng)
|
|
Gudina S., Neverov V., Ilchenko E., Bogolubskii A., Harus G., Shelushinina N., Podgornykh S., Yakunin M., Mikhailov N., Dvoretsky S.
|
| 卷 52, 编号 1 (2018) |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
(Eng)
|
|
Trukhin V., Bouravleuv A., Mustafin I., Cirlin G., Kakko J., Lipsanen H.
|
| 卷 51, 编号 12 (2017) |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
(Eng)
|
|
Yurasov D., Drozdov M., Shmagin V., Novikov A.
|
| 卷 51, 编号 12 (2017) |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
(Eng)
|
|
Rumyantsev V., Kadykov A., Fadeev M., Dubinov A., Utochkin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
|
| 卷 51, 编号 12 (2017) |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
(Eng)
|
|
Bovkun L., Ikonnikov A., Aleshkin V., Krishtopenko S., Antonov A., Spirin K., Mikhailov N., Dvoretsky S., Gavrilenko V.
|
| 卷 51, 编号 12 (2017) |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
(Eng)
|
|
Ikonnikov A., Bovkun L., Rumyantsev V., Krishtopenko S., Aleshkin V., Kadykov A., Orlita M., Potemski M., Gavrilenko V., Morozov S., Dvoretsky S., Mikhailov N.
|
| 卷 51, 编号 12 (2017) |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
(Eng)
|
|
Bushuykin P., Novikov A., Andreev B., Lobanov D., Yunin P., Skorokhodov E., Krasil’nikova L., Demidov E., Savchenko G., Davydov V.
|
| 卷 51, 编号 12 (2017) |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
(Eng)
|
|
Baidakova N., Verbus V., Morozova E., Novikov A., Skorohodov E., Shaleev M., Yurasov D., Hombe A., Kurokawa Y., Usami N.
|
| 卷 51, 编号 12 (2017) |
Manifestation of PT symmetry in the exciton spectra of quantum wells |
(Eng)
|
|
Kochereshko V., Kotova L., Khakhalin I., Cox R., Mariette H., Andre R., Bukari H., Ivanov S.
|
| 卷 51, 编号 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
(Eng)
|
|
Gorshkov A., Volkova N., Voronin P., Zdoroveyshchev A., Istomin L., Pavlov D., Usov Y., Levichev S.
|
| 卷 51, 编号 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
(Eng)
|
|
Reznik R., Kotlyar K., Shtrom I., Soshnikov I., Kukushkin S., Osipov A., Cirlin G.
|
| 卷 51, 编号 11 (2017) |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
(Eng)
|
|
Derebezov I., Gaisler V., Gaisler A., Dmitriev D., Toropov A., Fischbach S., Schlehahn A., Kaganskiy A., Heindel T., Bounouar S., Rodt S., Reitzenstein S.
|
| 卷 51, 编号 11 (2017) |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
(Eng)
|
|
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Novikov A., Rykov A., Samartsev I., Fefelov A., Yurasov D., Krasilnik Z.
|
| 卷 51, 编号 11 (2017) |
Thermoelectric effects in nanoscale layers of manganese silicide |
(Eng)
|
|
Erofeeva I., Dorokhin M., Lesnikov V., Kuznetsov Y., Zdoroveyshchev A., Pitirimova E.
|
| 卷 51, 编号 11 (2017) |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
(Eng)
|
|
Borisov V., Kuvshinova N., Kurochka S., Sizov V., Stepushkin M., Temiryazev A.
|
| 卷 51, 编号 11 (2017) |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
(Eng)
|
|
Degtyarev V., Khazanova S., Konakov A.
|
| 卷 51, 编号 11 (2017) |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
(Eng)
|
|
Murel A., Shmagin V., Krukov V., Strelchenko S., Surovegina E., Shashkin V.
|
| 卷 51, 编号 11 (2017) |
Features of the selective manganese doping of GaAs structures |
(Eng)
|
|
Kalentyeva I., Vikhrova O., Danilov Y., Zvonkov B., Kudrin A., Dorokhin M., Pavlov D., Antonov I., Drozdov M., Usov Y.
|
| 卷 51, 编号 11 (2017) |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
(Eng)
|
|
Tarasova E., Obolensky S., Galkin O., Hananova A., Makarov A.
|
| 卷 51, 编号 11 (2017) |
Contactless characterization of manganese and carbon delta-layers in gallium arsenide |
(Eng)
|
|
Komkov O., Kudrin A.
|
| 卷 51, 编号 11 (2017) |
Cyclotron resonance features in a three-dimensional topological insulators |
(Eng)
|
|
Turkevich R., Demikhovskii V., Protogenov A.
|
| 卷 51, 编号 11 (2017) |
Inhomogeneous dopant distribution in III–V nanowires |
(Eng)
|
|
Leshchenko E., Dubrovskii V.
|
| 卷 51, 编号 11 (2017) |
Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures |
(Eng)
|
|
Fateev D., Mashinsky K., Qin H., Sun J., Popov V.
|
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