Email this article Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
- Authors: Tarasova E.A.1, Obolensky S.V.1, Galkin O.E.1, Hananova A.V.1, Makarov A.B.1
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 51, No 11 (2017)
- Pages: 1490-1494
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://ogarev-online.ru/1063-7826/article/view/201754
- DOI: https://doi.org/10.1134/S1063782617110264
- ID: 201754
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Abstract
A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 1014 cm–2 is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.
About the authors
E. A. Tarasova
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: thelen@yandex.ru
Russian Federation, Nizhny Novgorod, 603600
S. V. Obolensky
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
Russian Federation, Nizhny Novgorod, 603600
O. E. Galkin
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
Russian Federation, Nizhny Novgorod, 603600
A. V. Hananova
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
Russian Federation, Nizhny Novgorod, 603600
A. B. Makarov
Lobachevsky State University of Nizhny Novgorod
Email: thelen@yandex.ru
Russian Federation, Nizhny Novgorod, 603600
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