Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation

Аннотация

A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10¹⁴ cm^–2 is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.