| Шығарылым |
Атауы |
Файл |
| Том 53, № 13 (2019) |
Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis |
(Eng)
|
|
Hyunggun Ma .
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| Том 53, № 12 (2019) |
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method |
(Eng)
|
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Shchukin V., Konstantinov V., Sharafutdinov R.
|
| Том 53, № 12 (2019) |
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |
(Eng)
|
|
Mokhov D., Berezovskaya T., Nikitina E., Shubina K., Mizerov A., Bouravleuv A.
|
| Том 53, № 12 (2019) |
InxAl1 –xN Solid Solutions: Composition Stability Issues |
(Eng)
|
|
Brudnyi V., Vilisova M., Velikovskiy L.
|
| Том 53, № 11 (2019) |
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique |
(Eng)
|
|
Svit K., Zhuravlev K.
|
| Том 53, № 11 (2019) |
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |
(Eng)
|
|
Levitskii Y., Mitrofanov M., Voznyuk G., Nikolayev D., Mizerov M., Evtikhiev V.
|
| Том 53, № 11 (2019) |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
(Eng)
|
|
Seredin P., Fedyukin A., Terekhov V., Barkov K., Arsentyev I., Bondarev A., Fomin E., Pikhtin N.
|
| Том 53, № 11 (2019) |
Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds |
(Eng)
|
|
Breev I., Anisimov A., Wolfson A., Kazarova O., Mokhov E.
|
| Том 53, № 8 (2019) |
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |
(Eng)
|
|
Aleshkin V., Baidus N., Dubinov A., Kudryavtsev K., Nekorkin S., Kruglov A., Reunov D.
|
| Том 53, № 8 (2019) |
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate |
(Eng)
|
|
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Mizerov A., Arsentyev I., Leiste H., Rinke M.
|
| Том 53, № 8 (2019) |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
(Eng)
|
|
Sorokin S., Avdienko P., Sedova I., Kirilenko D., Yagovkina M., Smirnov A., Davydov V., Ivanov S.
|
| Том 53, № 7 (2019) |
Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides |
(Eng)
|
|
Orlov L., Ivina N., Bozhenkin V.
|
| Том 53, № 7 (2019) |
Properties of Semipolar GaN Grown on a Si(100) Substrate |
(Eng)
|
|
Bessolov V., Konenkova E., Orlova T., Rodin S., Seredova N., Solomnikova A., Shcheglov M., Kibalov D., Smirnov V.
|
| Том 53, № 7 (2019) |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
(Eng)
|
|
Seredin P., Lenshin A., Zolotukhin D., Goloshchapov D., Mizerov A., Arsentyev I., Beltyukov A.
|
| Том 53, № 6 (2019) |
Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films |
(Eng)
|
|
Maskaeva L., Fedorova E., Markov V., Kuznetsov M., Lipina O.
|
| Том 53, № 4 (2019) |
Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols |
(Eng)
|
|
Bubenov S., Dorofeev S., Kononov N., Davydova D.
|
| Том 53, № 4 (2019) |
Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon |
(Eng)
|
|
Zharova Y., Tolmachev V., Pavlov S.
|
| Том 53, № 4 (2019) |
Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering |
(Eng)
|
|
Kumar B., Hymavathi B.
|
| Том 53, № 3 (2019) |
Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition |
(Eng)
|
|
Kalygina V., Lygdenova T., Novikov V., Petrova Y., Tsymbalov A., Yaskevich T.
|
| Том 53, № 3 (2019) |
Formation of Nanoporous Copper-Silicide Films |
(Eng)
|
|
Buchin E., Naumov V., Vasilyev S.
|
| Том 53, № 3 (2019) |
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation |
(Eng)
|
|
Volodin V., Krivyakin G., Ivlev G., Prokopyev S., Gusakova S., Popov A.
|
| Том 53, № 3 (2019) |
Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |
(Eng)
|
|
Tsai J., Lin P., Chen Y., Liou S., Niu J.
|
| Том 53, № 2 (2019) |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
(Eng)
|
|
Levin R., Nevedomskyi V., Bazhenov N., Zegrya G., Pushnyi B., Mizerov M.
|
| Том 53, № 2 (2019) |
Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves |
(Eng)
|
|
Viglin N., Gribov I., Tsvelikhovskaya V., Patrakov E.
|
| Том 53, № 2 (2019) |
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile |
(Eng)
|
|
Frolov D., Yakovlev G., Zubkov V.
|
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