Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation
- 作者: Volodin V.A.1,2, Krivyakin G.K.1,2, Ivlev G.D.3, Prokopyev S.L.3, Gusakova S.V.3, Popov A.A.4
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隶属关系:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Belarusian State University
- Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
- 期: 卷 53, 编号 3 (2019)
- 页面: 400-405
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://ogarev-online.ru/1063-7826/article/view/205894
- DOI: https://doi.org/10.1134/S1063782619030217
- ID: 205894
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详细
The processes of the crystallization of amorphous germanium films and multilayer germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ = 694 nm) are studied. The samples are grown on silicon and glassy substrates by plasma-enhanced chemical vapor deposition. Pulsed laser annealing of the samples is conducted in the range of pulse energy densities Ep from 0.07 to 0.8 J cm–2. The structure of the films after annealing is determined by analyzing the scanning electron microscopy data and Raman spectra. It is established that, after annealing, the films are completely crystallized and, in this case, contain regions of coarse crystalline grains (>100 nm), whose fraction increases, as Ep is increased, and reaches 40% of the area. From analysis of the position of the Raman peaks, it is conceived that the crystalline grains, whose dimensions exceed 100 nm, either contain structural defects or stretching strains. The correlation length of optical vibrations is determined from the phonon confinement model and found to increase from 5 to 8 nm, as Ep is increased. Pulsed laser annealing of multilayer Ge(10 nm)/Si(5 nm) structures induces partial intermixing of the layers with the formation of Ge–Si alloys.
作者简介
V. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
编辑信件的主要联系方式.
Email: volodin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
G. Krivyakin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: volodin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
G. Ivlev
Belarusian State University
Email: volodin@isp.nsc.ru
白俄罗斯, Minsk, 220030
S. Prokopyev
Belarusian State University
Email: volodin@isp.nsc.ru
白俄罗斯, Minsk, 220030
S. Gusakova
Belarusian State University
Email: volodin@isp.nsc.ru
白俄罗斯, Minsk, 220030
A. Popov
Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
Email: volodin@isp.nsc.ru
俄罗斯联邦, Yaroslavl, 150007
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