Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys
- Авторлар: Bodnar I.V.1, Victorov I.A.1, Jaafar M.A.1, Pauliukavets S.A.1
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Мекемелер:
- Belarusian State University of Information and Radio Electronics
- Шығарылым: Том 50, № 2 (2016)
- Беттер: 154-157
- Бөлім: Electronic Properties of Semiconductors
- URL: https://ogarev-online.ru/1063-7826/article/view/196731
- DOI: https://doi.org/10.1134/S1063782616020068
- ID: 196731
Дәйексөз келтіру
Аннотация
The transmittance spectra of single-crystal CuIn5S8 and FeIn2S4 ternary compounds and (CuIn5S8)1–x · (FeIn2S4)x alloys grown by planar crystallization of the melt are studied in the region of the fundamental-absorption edge. From the experimentally recorded spectra, the band gap of the compounds and their alloys is determined, and the compositional dependence of the band gap is constructed. It is established that the band gap nonlinearly varies with the composition parameter x (with a maximum at the average content x) and can be described by a quadratic dependence.
Авторлар туралы
I. Bodnar
Belarusian State University of Information and Radio Electronics
Хат алмасуға жауапты Автор.
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
I. Victorov
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
M. Jaafar
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
S. Pauliukavets
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
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