Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys
- 作者: Bodnar I.V.1, Victorov I.A.1, Jaafar M.A.1, Pauliukavets S.A.1
-
隶属关系:
- Belarusian State University of Information and Radio Electronics
- 期: 卷 50, 编号 2 (2016)
- 页面: 154-157
- 栏目: Electronic Properties of Semiconductors
- URL: https://ogarev-online.ru/1063-7826/article/view/196731
- DOI: https://doi.org/10.1134/S1063782616020068
- ID: 196731
如何引用文章
详细
The transmittance spectra of single-crystal CuIn5S8 and FeIn2S4 ternary compounds and (CuIn5S8)1–x · (FeIn2S4)x alloys grown by planar crystallization of the melt are studied in the region of the fundamental-absorption edge. From the experimentally recorded spectra, the band gap of the compounds and their alloys is determined, and the compositional dependence of the band gap is constructed. It is established that the band gap nonlinearly varies with the composition parameter x (with a maximum at the average content x) and can be described by a quadratic dependence.
作者简介
I. Bodnar
Belarusian State University of Information and Radio Electronics
编辑信件的主要联系方式.
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220013
I. Victorov
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220013
M. Jaafar
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220013
S. Pauliukavets
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
白俄罗斯, Minsk, 220013
补充文件
