Отправить статью по E-mail Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys
- Авторы: Bodnar I.V.1, Victorov I.A.1, Jaafar M.A.1, Pauliukavets S.A.1
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Учреждения:
- Belarusian State University of Information and Radio Electronics
- Выпуск: Том 50, № 2 (2016)
- Страницы: 154-157
- Раздел: Electronic Properties of Semiconductors
- URL: https://ogarev-online.ru/1063-7826/article/view/196731
- DOI: https://doi.org/10.1134/S1063782616020068
- ID: 196731
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Аннотация
The transmittance spectra of single-crystal CuIn5S8 and FeIn2S4 ternary compounds and (CuIn5S8)1–x · (FeIn2S4)x alloys grown by planar crystallization of the melt are studied in the region of the fundamental-absorption edge. From the experimentally recorded spectra, the band gap of the compounds and their alloys is determined, and the compositional dependence of the band gap is constructed. It is established that the band gap nonlinearly varies with the composition parameter x (with a maximum at the average content x) and can be described by a quadratic dependence.
Об авторах
I. Bodnar
Belarusian State University of Information and Radio Electronics
Автор, ответственный за переписку.
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
I. Victorov
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
M. Jaafar
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
S. Pauliukavets
Belarusian State University of Information and Radio Electronics
Email: chemzav@bsuir.by
Белоруссия, Minsk, 220013
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