Silicon pressure transmitters with overload protection
- Authors: Andreev K.A.1, Vlasov A.I.1, Shakhnov V.A.1
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Affiliations:
- Bauman Moscow State University
- Issue: Vol 77, No 7 (2016)
- Pages: 1281-1285
- Section: Sensors and Systems
- URL: https://ogarev-online.ru/0005-1179/article/view/150391
- DOI: https://doi.org/10.1134/S0005117916070146
- ID: 150391
Cite item
Abstract
The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.
About the authors
K. A. Andreev
Bauman Moscow State University
Author for correspondence.
Email: kost87@mail.ru
Russian Federation, Moscow
A. I. Vlasov
Bauman Moscow State University
Email: kost87@mail.ru
Russian Federation, Moscow
V. A. Shakhnov
Bauman Moscow State University
Email: kost87@mail.ru
Russian Federation, Moscow
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