Silicon pressure transmitters with overload protection


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Abstract

The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.

About the authors

K. A. Andreev

Bauman Moscow State University

Author for correspondence.
Email: kost87@mail.ru
Russian Federation, Moscow

A. I. Vlasov

Bauman Moscow State University

Email: kost87@mail.ru
Russian Federation, Moscow

V. A. Shakhnov

Bauman Moscow State University

Email: kost87@mail.ru
Russian Federation, Moscow

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