Silicon pressure transmitters with overload protection
- Авторлар: Andreev K.A.1, Vlasov A.I.1, Shakhnov V.A.1
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Мекемелер:
- Bauman Moscow State University
- Шығарылым: Том 77, № 7 (2016)
- Беттер: 1281-1285
- Бөлім: Sensors and Systems
- URL: https://ogarev-online.ru/0005-1179/article/view/150391
- DOI: https://doi.org/10.1134/S0005117916070146
- ID: 150391
Дәйексөз келтіру
Аннотация
The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.
Авторлар туралы
K. Andreev
Bauman Moscow State University
Хат алмасуға жауапты Автор.
Email: kost87@mail.ru
Ресей, Moscow
A. Vlasov
Bauman Moscow State University
Email: kost87@mail.ru
Ресей, Moscow
V. Shakhnov
Bauman Moscow State University
Email: kost87@mail.ru
Ресей, Moscow
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