Silicon pressure transmitters with overload protection


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The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.

作者简介

K. Andreev

Bauman Moscow State University

编辑信件的主要联系方式.
Email: kost87@mail.ru
俄罗斯联邦, Moscow

A. Vlasov

Bauman Moscow State University

Email: kost87@mail.ru
俄罗斯联邦, Moscow

V. Shakhnov

Bauman Moscow State University

Email: kost87@mail.ru
俄罗斯联邦, Moscow

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