Silicon pressure transmitters with overload protection


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.

Sobre autores

K. Andreev

Bauman Moscow State University

Autor responsável pela correspondência
Email: kost87@mail.ru
Rússia, Moscow

A. Vlasov

Bauman Moscow State University

Email: kost87@mail.ru
Rússia, Moscow

V. Shakhnov

Bauman Moscow State University

Email: kost87@mail.ru
Rússia, Moscow

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2016