Silicon pressure transmitters with overload protection
- Autores: Andreev K.A.1, Vlasov A.I.1, Shakhnov V.A.1
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Afiliações:
- Bauman Moscow State University
- Edição: Volume 77, Nº 7 (2016)
- Páginas: 1281-1285
- Seção: Sensors and Systems
- URL: https://ogarev-online.ru/0005-1179/article/view/150391
- DOI: https://doi.org/10.1134/S0005117916070146
- ID: 150391
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Resumo
The paper considers protection of silicon tensoresistive sensing elements against overload. A detailed analysis is focused on silicon crystal modeling of sensing elements exposed to pressures exceeding the upper limit of measurements. The existing designs of sensing element membranes and possible configurations of locking elements are summarized. In conclusion, the design of a sensing element in a differential pressure sensor with two locking elements is proposed.
Sobre autores
K. Andreev
Bauman Moscow State University
Autor responsável pela correspondência
Email: kost87@mail.ru
Rússia, Moscow
A. Vlasov
Bauman Moscow State University
Email: kost87@mail.ru
Rússia, Moscow
V. Shakhnov
Bauman Moscow State University
Email: kost87@mail.ru
Rússia, Moscow
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