Study of the structure of multilayer metallic coatings on silicon by SEM and AFM
- Autores: Gorbunov D.S., Mishkin V.P., Nishchev K.N., Novopoltsev M.I., Uskova E.N.
- Edição: Volume 2, Nº 19 (2014)
- Seção: Статьи
- ##submission.dateSubmitted##: 06.05.2025
- ##submission.dateAccepted##: 06.05.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/290668
- ID: 290668
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Resumo
The structure and elemental composition of the multilayer metallic coatings used as a transition of the ohmic contact interface system structures of large power semiconductor devices have been identified by chemical etching, etching by focused ion beam, scanning electron microscopy, scanning probe microscopy. The metal coatings were deposited on the surface of the silicon structures by the magnetron sputtering technique. The results demonstrate the efficiency of the combined application of chemical and ion etching, SEM and AFM to study the structure and elemental composition of multilayer metal coatings on silicon.
Sobre autores
D. Gorbunov
Autor responsável pela correspondência
Email: ogarevonline@yandex.ru
Rússia
V. Mishkin
Email: ogarevonline@yandex.ru
Rússia
K. Nishchev
Email: ogarevonline@yandex.ru
Rússia
M. Novopoltsev
Email: ogarevonline@yandex.ru
Rússia
E. Uskova
Email: ogarevonline@yandex.ru
Rússia
Bibliografia
- Fellenger J., Baumgartner W. Patentschrift - DE 3414065 C2. Deutsches Patentamt. - 1989.
- Schwarzbauer H., Europaische Patentschrift EP 0 242 626 B1. Europaisches Patentamt. - 1991.
- Schwarzbauer H., Kuhnert R. Novel Large Area Joining Technique for Improved Pover Device Performance. In: IEEE Trans. Ind. Appl. - 1991. -Vol. 27.- № 1.- pp. 93-95.
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