Study of the structure of multilayer metallic coatings on silicon by SEM and AFM
- Авторлар: Gorbunov D.S., Mishkin V.P., Nishchev K.N., Novopoltsev M.I., Uskova E.N.
- Шығарылым: Том 2, № 19 (2014)
- Бөлім: Статьи
- ##submission.dateSubmitted##: 06.05.2025
- ##submission.dateAccepted##: 06.05.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/290668
- ID: 290668
Дәйексөз келтіру
Толық мәтін
Аннотация
The structure and elemental composition of the multilayer metallic coatings used as a transition of the ohmic contact interface system structures of large power semiconductor devices have been identified by chemical etching, etching by focused ion beam, scanning electron microscopy, scanning probe microscopy. The metal coatings were deposited on the surface of the silicon structures by the magnetron sputtering technique. The results demonstrate the efficiency of the combined application of chemical and ion etching, SEM and AFM to study the structure and elemental composition of multilayer metal coatings on silicon.
Авторлар туралы
D. Gorbunov
Хат алмасуға жауапты Автор.
Email: ogarevonline@yandex.ru
Ресей
V. Mishkin
Email: ogarevonline@yandex.ru
Ресей
K. Nishchev
Email: ogarevonline@yandex.ru
Ресей
M. Novopoltsev
Email: ogarevonline@yandex.ru
Ресей
E. Uskova
Email: ogarevonline@yandex.ru
Ресей
Әдебиет тізімі
- Fellenger J., Baumgartner W. Patentschrift - DE 3414065 C2. Deutsches Patentamt. - 1989.
- Schwarzbauer H., Europaische Patentschrift EP 0 242 626 B1. Europaisches Patentamt. - 1991.
- Schwarzbauer H., Kuhnert R. Novel Large Area Joining Technique for Improved Pover Device Performance. In: IEEE Trans. Ind. Appl. - 1991. -Vol. 27.- № 1.- pp. 93-95.
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