Vol 4, No 18 (2016)
- Year: 2016
- Published: 10.12.2016
- Articles: 10
- URL: https://ogarev-online.ru/2311-2468/issue/view/18715
Full Issue
Varactor diodes based on multilayer epitaxial GaAs-composition for high-frequency equipment
Abstract
The article presents the results of designing and studying of semiconductor mesaepitaxial GaAs-varactor diodes for general application in high-frequency equipment. The study provides the general technical requirements for GaAs-varactor diodes and the electrical parameters of the experimental mesaepitaxial GaAs-varactor diodes.
Computer-assisted apparatus for researching microplasma breakdown in p–n junctions
Abstract
The paper gives a description of the method and apparatus for defining of the p–n junction microplasma breakdown. It is shown that the delay of microplasma breakdown allows us to define deep center parameters located in microplasma channels of p–n junctions and there are no other ways to do that.
Microplasma breakdown delay in p–n junction due to charge carriers emission from two-level center
Abstract
The paper provides an analysis of the effect of deep centers on the static delay of microplasma breakdown in p–n junction. The research includes a numerical calculation of the probability of microplasma turn-on if charge carriers emission from the two-level trap takes place. The features of distribution in time of the static delay of microplasma breakdown were defined, when two close-located levels are owned by two different charge states of the same center.
Introduction of data transfer technology homeplug AV(AV2) on power line 220 v 50 hz in buildings
Abstract
The article considers the advantages of introduction of the data transfer technology HomePlug AV(AV2) on the power line. A number of tests were done to determine the factors of data transfer quality. The author makes a list of requirements to introducing of the technology HomePlug AV(AV2).
Surface roughness effects on cleaning efficiency of silicon carbide wafers
Abstract
The paper presents the study results of the effects of roughness parameters of single crystal silicon carbide wafers on the efficiency of their cleaning by chemical and megasonic processing. It is shown that the cleaning efficiency increases with the increasing of polishing quality, i.e. with the decreasing of roughness parameters.
On the effect of parameter spread of direct current-voltage characteristic of power transistors on temperature of semiconductor structure
Abstract
The article presents the measurement results of the parameters of the direct current- voltage characteristics in a series of 50 IGBT transistors of the same name. The histograms of parameter spread on samples at 20 °C and 100 °C are included. Bу means of mathematical calculations the temperature of the semiconductor structure of each transistor of the series was predicted. The conclusions about the effect of the parameter spread on the semiconductor temperature were made.
Complex studying of basic elements of automation in the courses designed for students of industrial electronics
Abstract
The article considers the principles of a training bench construction for complex studying of the functionality of rate-of-turn transducers of motors, programmable logic controllers and operator panels in industrial automation systems. The designed training bench is based on the equipment of the Russian company OWEN.
Designing of workbench for automated process control system of raw coal feeders operation for heat and power plant
Abstract
The main types of modern high-power thermal power networks are heat and power plants with turbines having controlled steam extraction for the production of electricity and heat. One of the prerequisites for the heat and power plant boilers automation is the rational control of the equipment technological parameters with advanced control devices that meet the modern standards for safety and energy saving. The paper considers the designing of a workbench based on the equipment of the company OWEN.