Simulation of dependence of switching voltage of high-voltage thyristors on construction of breakover diode
- Authors: Kirdyashkin N.N., Paderov V.P.
- Issue: Vol 7, No 11 (2019)
- Section: Статьи
- Submitted: 07.04.2025
- Accepted: 07.04.2025
- URL: https://ogarev-online.ru/2311-2468/article/view/286739
- ID: 286739
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Abstract
The article is devoted to the study of the influence of the breakover diode construction on the switching voltage of thyristors with self-protection against overvoltage. The results of a physical and topological simulation are provided.
About the authors
N. N. Kirdyashkin
Author for correspondence.
Email: ogarevonline@yandex.ru
Russian Federation
V. P. Paderov
Email: ogarevonline@yandex.ru
Russian Federation
References
- Пат. 5455434 США, МПК H 01 L 29 / 743, Thyristor with breakdown region / F. Pfirsch; заявитель и правообладатель Siemens Aktiengesellschaft – № 19930059492; заявл. 10.05.1993; опубл. 03.10.1995. – 5 с.
- Niedernostheide F. -J., Schulze H.-J., Kellner-Werdehausen U., Dorn J., Westerholt D. Light-Triggered Thyristors with Integrated Protection Functions // Power Semiconductor Devices and ICs. – 2000. – Vol. 12. – P. 267–270.
- Sentaurus Structure Editor User Guide. Synopsis TCAD Release 10.0., 2017. – 880 p.
- Sentaurus Device User Guide. Synopsis TCAD Release 10.0, 2017. – 1546 p.
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