InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

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Abstract

Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.

About the authors

A. L. Dudin

ZAO Svetlana-Rost

Author for correspondence.
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156

N. I. Katsavets

ZAO Svetlana-Rost

Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156

D. M. Krasovitsky

ZAO Svetlana-Rost

Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156

S. V. Kokin

ZAO Svetlana-Rost

Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156

V. P. Chaly

ZAO Svetlana-Rost

Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156

I. V. Shukov

ZAO Svetlana-Rost

Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156

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