InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm
- Authors: Dudin A.L.1, Katsavets N.I.1, Krasovitsky D.M.1, Kokin S.V.1, Chaly V.P.1, Shukov I.V.1
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Affiliations:
- ZAO Svetlana-Rost
- Issue: Vol 63, No 3 (2018)
- Pages: 296-299
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://ogarev-online.ru/1064-2269/article/view/199606
- DOI: https://doi.org/10.1134/S1064226918030063
- ID: 199606
Cite item
Abstract
Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.
Keywords
About the authors
A. L. Dudin
ZAO Svetlana-Rost
Author for correspondence.
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156
N. I. Katsavets
ZAO Svetlana-Rost
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156
D. M. Krasovitsky
ZAO Svetlana-Rost
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156
S. V. Kokin
ZAO Svetlana-Rost
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156
V. P. Chaly
ZAO Svetlana-Rost
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156
I. V. Shukov
ZAO Svetlana-Rost
Email: a.dudin@svrost.ru
Russian Federation, St. Petersburg, 194156
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