InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

A. L. Dudin; N. I. Katsavets; D. M. Krasovitsky; S. V. Kokin; V. P. Chaly; I. V. Shukov

doi:10.1134/S1064226918030063

InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

Autores: Dudin A.L.¹, Katsavets N.I.¹, Krasovitsky D.M.¹, Kokin S.V.¹, Chaly V.P.¹, Shukov I.V.¹
Afiliações:
1. ZAO Svetlana-Rost
Edição: Volume 63, Nº 3 (2018)
Páginas: 296-299
Seção: Articles from the Russian Journal Prikladnaya Fizika
URL: https://ogarev-online.ru/1064-2269/article/view/199606
DOI: https://doi.org/10.1134/S1064226918030063
ID: 199606

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Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.