Effect of Gamma Irradiation on Conductivity of Cd1 – xFexTe


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详细

The effect of γ-irradiation at the dose Dγ = 605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd1 – xFexTe semimagnetic semiconductors were investigated. The character of the ε(T) dependences of the irradiated Cd1 – xFexTe changes: there is a drop in the curves in the temperature range of 300–400 K at measurement frequencies 10 kHz–1 MHz, and ε increases by 20 times. In the σ(T) dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity.

作者简介

M. Mehrabova

Institute of Radiation Problems of ANAS

编辑信件的主要联系方式.
Email: m.mehrabova@science.az
阿塞拜疆, Baku

H. Nuriyev

Institute of Physics of ANAS Named after Academician G.M. Abdullayev

Email: m.mehrabova@science.az
阿塞拜疆, Baku

H. Orujov

Institute of Physics of ANAS Named after Academician G.M. Abdullayev; Azerbaijan Technical University

Email: m.mehrabova@science.az
阿塞拜疆, Baku; Baku

N. Hasanov

Baku State University

Email: m.mehrabova@science.az
阿塞拜疆, Baku

T. Kerimova

Institute of Radiation Problems of ANAS

Email: m.mehrabova@science.az
阿塞拜疆, Baku

A. Abdullayeva

Azerbaijan Technical University

Email: m.mehrabova@science.az
阿塞拜疆, Baku

A. Kazimova

Ganja State University

Email: m.mehrabova@science.az
阿塞拜疆, Ganja

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