Effect of Gamma Irradiation on Conductivity of Cd1 – xFexTe


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Resumo

The effect of γ-irradiation at the dose Dγ = 605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd1 – xFexTe semimagnetic semiconductors were investigated. The character of the ε(T) dependences of the irradiated Cd1 – xFexTe changes: there is a drop in the curves in the temperature range of 300–400 K at measurement frequencies 10 kHz–1 MHz, and ε increases by 20 times. In the σ(T) dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity.

Sobre autores

M. Mehrabova

Institute of Radiation Problems of ANAS

Autor responsável pela correspondência
Email: m.mehrabova@science.az
Azerbaijão, Baku

H. Nuriyev

Institute of Physics of ANAS Named after Academician G.M. Abdullayev

Email: m.mehrabova@science.az
Azerbaijão, Baku

H. Orujov

Institute of Physics of ANAS Named after Academician G.M. Abdullayev; Azerbaijan Technical University

Email: m.mehrabova@science.az
Azerbaijão, Baku; Baku

N. Hasanov

Baku State University

Email: m.mehrabova@science.az
Azerbaijão, Baku

T. Kerimova

Institute of Radiation Problems of ANAS

Email: m.mehrabova@science.az
Azerbaijão, Baku

A. Abdullayeva

Azerbaijan Technical University

Email: m.mehrabova@science.az
Azerbaijão, Baku

A. Kazimova

Ganja State University

Email: m.mehrabova@science.az
Azerbaijão, Ganja

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