| Edição |
Título |
Arquivo |
| Volume 61, Nº 12 (2019) |
On Thermomigration Velocity of Liquid Cylindrical Inclusions in a Crystal under Stationary Thermal Conditions |
(Eng)
|
|
Garmashov S.
|
| Volume 61, Nº 12 (2019) |
High Resolution Investigation on the NiAu Ohmic Contact to p-AlGaN|GaN Heterostructure |
(Eng)
|
|
Zheng-Fei Hu ., Li X., Zhang Y.
|
| Volume 61, Nº 12 (2019) |
Dependence of Properties of Variable Gradient Porous Structures of Silicon on the Method of Formation |
(Eng)
|
|
Rubtsova K., Silina M.
|
| Volume 61, Nº 12 (2019) |
Effect of Gamma Irradiation on Conductivity of Cd1 – xFexTe |
(Eng)
|
|
Mehrabova M., Nuriyev H., Orujov H., Hasanov N., Kerimova T., Abdullayeva A., Kazimova A.
|
| Volume 61, Nº 12 (2019) |
Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution |
(Eng)
|
|
Grashchenko A., Kukushkin S., Osipov A.
|
| Volume 61, Nº 12 (2019) |
Impact of Elastic Stress on Crystal Phase of GaP Nanowires |
(Eng)
|
|
Sibirev N., Berdnikov Y., Sibirev V.
|
| Volume 61, Nº 12 (2019) |
Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers |
(Eng)
|
|
Sorokin L., Gutkin M., Myasoedov A., Kalmykov A., Bessolov V., Kukushkin S.
|
| Volume 61, Nº 12 (2019) |
Growth Anisotropy and Crystal Structure of Linear Conjugated Oligomers |
(Eng)
|
|
Postnikov V., Lyasnikova M., Kulishov A., Sorokina N., Voloshin A., Skorotetcky M., Borshchev O., Ponomarenko S.
|
| Volume 61, Nº 12 (2019) |
Formation of AgInS2/ZnS Colloidal Nanocrystals and Their Photoluminescence Properties |
(Eng)
|
|
Korepanov O., Mazing D., Aleksandrova O., Moshnikov V., Komolov A., Lazneva E., Kirilenko D.
|
| Volume 61, Nº 12 (2019) |
Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface |
(Eng)
|
|
Kozhukhov A., Aleksandrov I., Rzheutski N., Lebiadok E., Razumets E., Zhuravlev K., Milakhin D., Malin T., Mansurov V., Galitsyn Y.
|
| Volume 61, Nº 12 (2019) |
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography |
(Eng)
|
|
Rodin S., Lundin W., Tsatsulnikov A., Sakharov A., Usov S., Mitrofanov M., Levitskii I., Evtikhiev V., Kaliteevski M.
|
| Volume 61, Nº 12 (2019) |
Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal |
(Eng)
|
|
Kukushkin S., Osipov A.
|
| Volume 61, Nº 12 (2019) |
A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates |
(Eng)
|
|
Kukushkin S., Sharofidinov S.
|
| Volume 61, Nº 12 (2019) |
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates |
(Eng)
|
|
Mizerov A., Kukushkin S., Sharofidinov S., Osipov A., Timoshnev S., Shubina K., Berezovskaya T., Mokhov D., Buravlev A.
|
| Volume 61, Nº 12 (2019) |
Studies of Thermoelectric Properties of Superlattices Based on Manganese Silicide and Germanium |
(Eng)
|
|
Dorokhin M., Kuznetsov Y., Lesnikov V., Zdoroveyshchev A., Demina P., Erofeeva I.
|
| Volume 61, Nº 12 (2019) |
Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy |
(Eng)
|
|
Timoshnev S., Mizerov A., Benemanskaya G., Kukushkin S., Buravlev A.
|
| Volume 61, Nº 12 (2019) |
Effect of Solid-State Epitaxial Recrystallization on Defect Density in Ultrathin Silicon-on-Sapphire Layers |
(Eng)
|
|
Fedotov S., Statsenko V., Egorov N., Golubkov S.
|
| Volume 61, Nº 12 (2019) |
Growing Bulk Aluminum Nitride and Gallium Nitride Crystals by the Sublimation Sandwich Method |
(Eng)
|
|
Mokhov E., Wol’fson A., Kazarova O.
|
| Volume 61, Nº 12 (2019) |
Features of Forming the Electronic Structure at Synthesis of Ti2AlC, Ti2AlN, Ti2SiC, and Ti2SiN Compounds |
(Eng)
|
|
Zavodinskii V., Gorkusha O.
|
| Volume 61, Nº 11 (2019) |
The Dipole Ordering and the Ionic Conductivity in the NASICON-Like Structures of the Na3Sc2(PO4)3 Type |
(Eng)
|
|
Nogai A., Nogai A., Stefanovich S., Solikhodzha Z., Uskenbaev D.
|
| Volume 61, Nº 11 (2019) |
Electronic Structure of Molybdenum Oxidized in Air |
(Eng)
|
|
Dement’ev P., Ivanova E., Lapushkin M., Smirnov D., Timoshnev S.
|
| Volume 61, Nº 11 (2019) |
Effect of the Chemical Composition of TlIn1 – xErxS2 (0 ≤ x ≤ 0.01) Crystals on Their Dielectric Characteristics and the Parameters of Localized States |
(Eng)
|
|
Mustafaeva S., Asadov M.
|
| Volume 61, Nº 11 (2019) |
The Impurity Magnetic Susceptibility of Semiconductors in the Case of Direct Exchange Interaction in the Ising Model |
(Eng)
|
|
Bogoslovskiy N., Petrov P., Averkiev N.
|
| Volume 61, Nº 11 (2019) |
Photoluminescence of Cu2O Crystals of Different Origins |
(Eng)
|
|
Agekyan V., Serov A., Filosofov N.
|
| Volume 61, Nº 10 (2019) |
The Influence of Electron Irradiation on the Dielectric Characteristics of Single Crystals of AgGaSe2 |
(Eng)
|
|
Sheleg A., Hurtavy V.
|
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