Effect of Gamma Irradiation on Conductivity of Cd1 – xFexTe


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Аннотация

The effect of γ-irradiation at the dose Dγ = 605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd1 – xFexTe semimagnetic semiconductors were investigated. The character of the ε(T) dependences of the irradiated Cd1 – xFexTe changes: there is a drop in the curves in the temperature range of 300–400 K at measurement frequencies 10 kHz–1 MHz, and ε increases by 20 times. In the σ(T) dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity.

Авторлар туралы

M. Mehrabova

Institute of Radiation Problems of ANAS

Хат алмасуға жауапты Автор.
Email: m.mehrabova@science.az
Әзірбайжан, Baku

H. Nuriyev

Institute of Physics of ANAS Named after Academician G.M. Abdullayev

Email: m.mehrabova@science.az
Әзірбайжан, Baku

H. Orujov

Institute of Physics of ANAS Named after Academician G.M. Abdullayev; Azerbaijan Technical University

Email: m.mehrabova@science.az
Әзірбайжан, Baku; Baku

N. Hasanov

Baku State University

Email: m.mehrabova@science.az
Әзірбайжан, Baku

T. Kerimova

Institute of Radiation Problems of ANAS

Email: m.mehrabova@science.az
Әзірбайжан, Baku

A. Abdullayeva

Azerbaijan Technical University

Email: m.mehrabova@science.az
Әзірбайжан, Baku

A. Kazimova

Ganja State University

Email: m.mehrabova@science.az
Әзірбайжан, Ganja

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