High-Speed Composite Microactuator Based on Ti2NiCu Alloy with Shape Memory Effect
- 作者: Kuchin D.S.1, Lega P.V.1, Orlov A.P.1, Frolov A.V.1, Irzhak A.V.2,3, Zhikharev A.M.1, Kamantsev A.P.1, Koledov V.V.1,4, Shelyakov A.V.5, Shavrov V.G.1
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隶属关系:
- Kotelnikov Institute of Radio Engineering and Electronics
- National University of Science and Technology “MISiS”
- Institute of Technological Problems of Microelectronics and Ultrapure Materials
- Institute for Nanotechnology in Micrtoelectronics
- National Research Nuclear University “MEPhI”
- 期: 卷 60, 编号 6 (2018)
- 页面: 1163-1167
- 栏目: Mechanical Properties, Physics of Strength, and Plasticity
- URL: https://ogarev-online.ru/1063-7834/article/view/203197
- DOI: https://doi.org/10.1134/S1063783418060173
- ID: 203197
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详细
Samples of microactuators are made of a bimorph composite of Ti2NiCu alloy with a thermoelastic martensitic transition and the shape memory effect, and their response rate is investigated. The active layer of the composite actuator is a layer of the rapidly quenched Ti2NiCu alloy, pseudoplastically prestretched, and an amorphous layer of the same alloy is used as an elastic layer. Typical sizes of the microactuator are 30 × 2 × 2 μm. The controlled amplitude of the displacement of the microactuator tip is approximately 1 μm. The response rate of the microactuator was investigated by scanning electron microscopy. Activation of the microactuator was achieved by heating when electric pulses were passed through it. Full activation of the microactuator at frequencies up to 1 kHz was demonstrated; partial activation was observed at frequencies up to 8 kHz. The possibility of operating the device in a self-oscillating mode at frequencies of the order of 100 kHz is demonstrated.
作者简介
D. Kuchin
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
P. Lega
Kotelnikov Institute of Radio Engineering and Electronics
编辑信件的主要联系方式.
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
A. Orlov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
A. Frolov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
A. Irzhak
National University of Science and Technology “MISiS”; Institute of Technological Problems of Microelectronics and Ultrapure Materials
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 119049; Chernogolovka, Moscow oblast, 142432
A. Zhikharev
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
A. Kamantsev
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
V. Koledov
Kotelnikov Institute of Radio Engineering and Electronics; Institute for Nanotechnology in Micrtoelectronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009; Moscow, 115487
A. Shelyakov
National Research Nuclear University “MEPhI”
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 115409
V. Shavrov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
俄罗斯联邦, Moscow, 125009
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