High-Speed Composite Microactuator Based on Ti2NiCu Alloy with Shape Memory Effect
- Авторлар: Kuchin D.S.1, Lega P.V.1, Orlov A.P.1, Frolov A.V.1, Irzhak A.V.2,3, Zhikharev A.M.1, Kamantsev A.P.1, Koledov V.V.1,4, Shelyakov A.V.5, Shavrov V.G.1
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Мекемелер:
- Kotelnikov Institute of Radio Engineering and Electronics
- National University of Science and Technology “MISiS”
- Institute of Technological Problems of Microelectronics and Ultrapure Materials
- Institute for Nanotechnology in Micrtoelectronics
- National Research Nuclear University “MEPhI”
- Шығарылым: Том 60, № 6 (2018)
- Беттер: 1163-1167
- Бөлім: Mechanical Properties, Physics of Strength, and Plasticity
- URL: https://ogarev-online.ru/1063-7834/article/view/203197
- DOI: https://doi.org/10.1134/S1063783418060173
- ID: 203197
Дәйексөз келтіру
Аннотация
Samples of microactuators are made of a bimorph composite of Ti2NiCu alloy with a thermoelastic martensitic transition and the shape memory effect, and their response rate is investigated. The active layer of the composite actuator is a layer of the rapidly quenched Ti2NiCu alloy, pseudoplastically prestretched, and an amorphous layer of the same alloy is used as an elastic layer. Typical sizes of the microactuator are 30 × 2 × 2 μm. The controlled amplitude of the displacement of the microactuator tip is approximately 1 μm. The response rate of the microactuator was investigated by scanning electron microscopy. Activation of the microactuator was achieved by heating when electric pulses were passed through it. Full activation of the microactuator at frequencies up to 1 kHz was demonstrated; partial activation was observed at frequencies up to 8 kHz. The possibility of operating the device in a self-oscillating mode at frequencies of the order of 100 kHz is demonstrated.
Авторлар туралы
D. Kuchin
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009
P. Lega
Kotelnikov Institute of Radio Engineering and Electronics
Хат алмасуға жауапты Автор.
Email: lega_peter@list.ru
Ресей, Moscow, 125009
A. Orlov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009
A. Frolov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009
A. Irzhak
National University of Science and Technology “MISiS”; Institute of Technological Problems of Microelectronics and Ultrapure Materials
Email: lega_peter@list.ru
Ресей, Moscow, 119049; Chernogolovka, Moscow oblast, 142432
A. Zhikharev
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009
A. Kamantsev
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009
V. Koledov
Kotelnikov Institute of Radio Engineering and Electronics; Institute for Nanotechnology in Micrtoelectronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009; Moscow, 115487
A. Shelyakov
National Research Nuclear University “MEPhI”
Email: lega_peter@list.ru
Ресей, Moscow, 115409
V. Shavrov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Ресей, Moscow, 125009
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