High-Speed Composite Microactuator Based on Ti2NiCu Alloy with Shape Memory Effect
- Authors: Kuchin D.S.1, Lega P.V.1, Orlov A.P.1, Frolov A.V.1, Irzhak A.V.2,3, Zhikharev A.M.1, Kamantsev A.P.1, Koledov V.V.1,4, Shelyakov A.V.5, Shavrov V.G.1
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Affiliations:
- Kotelnikov Institute of Radio Engineering and Electronics
- National University of Science and Technology “MISiS”
- Institute of Technological Problems of Microelectronics and Ultrapure Materials
- Institute for Nanotechnology in Micrtoelectronics
- National Research Nuclear University “MEPhI”
- Issue: Vol 60, No 6 (2018)
- Pages: 1163-1167
- Section: Mechanical Properties, Physics of Strength, and Plasticity
- URL: https://ogarev-online.ru/1063-7834/article/view/203197
- DOI: https://doi.org/10.1134/S1063783418060173
- ID: 203197
Cite item
Abstract
Samples of microactuators are made of a bimorph composite of Ti2NiCu alloy with a thermoelastic martensitic transition and the shape memory effect, and their response rate is investigated. The active layer of the composite actuator is a layer of the rapidly quenched Ti2NiCu alloy, pseudoplastically prestretched, and an amorphous layer of the same alloy is used as an elastic layer. Typical sizes of the microactuator are 30 × 2 × 2 μm. The controlled amplitude of the displacement of the microactuator tip is approximately 1 μm. The response rate of the microactuator was investigated by scanning electron microscopy. Activation of the microactuator was achieved by heating when electric pulses were passed through it. Full activation of the microactuator at frequencies up to 1 kHz was demonstrated; partial activation was observed at frequencies up to 8 kHz. The possibility of operating the device in a self-oscillating mode at frequencies of the order of 100 kHz is demonstrated.
About the authors
D. S. Kuchin
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
P. V. Lega
Kotelnikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. P. Orlov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. V. Frolov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. V. Irzhak
National University of Science and Technology “MISiS”; Institute of Technological Problems of Microelectronics and Ultrapure Materials
Email: lega_peter@list.ru
Russian Federation, Moscow, 119049; Chernogolovka, Moscow oblast, 142432
A. M. Zhikharev
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. P. Kamantsev
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
V. V. Koledov
Kotelnikov Institute of Radio Engineering and Electronics; Institute for Nanotechnology in Micrtoelectronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009; Moscow, 115487
A. V. Shelyakov
National Research Nuclear University “MEPhI”
Email: lega_peter@list.ru
Russian Federation, Moscow, 115409
V. G. Shavrov
Kotelnikov Institute of Radio Engineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
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