Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition


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Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) ZnO hexagonal phase planes. The (101) and (102) planes have also been detected by electron diffraction. The ZnO:Al thin films grow smooth with a root-mean-square roughness of Rq = 0.33 nm and characteristic nanocrystallite sizes of ~70 and ~15 nm without additional aluminum or aluminum oxide phases. The transmission at a wavelength of 550 nm with regard to the substrate has been found to be 96%. The refractive indices and absorption coefficients of the ZnO:Al thin films in the wavelength range of 250–900 nm have been determined. The maximum refractive indices and absorption coefficients have been found to be 2.09 at a wavelength of 335 nm and 0.39 at a wavelength of 295 nm, respectively. The optical band gap is 3.56 eV. The resistivity, Seebeck coefficient, and power factor of the ZnO:Al thin films are ∼1.02 × 10–3 Ω cm, –60 μV/K, and 340 μW m–1 K–2 at room temperature, respectively. The maximum power factor attains 620 μW m–1 K–2 at a temperature of 200°C.

Sobre autores

I. Tambasov

Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences

Autor responsável pela correspondência
Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036

M. Volochaev

Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036

A. Voronin

Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036

N. Evsevskaya

Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences; Institute of Chemistry and Chemical Technology, Krasnoyarsk Scientific Center, Siberian Branch,
Russian Academy of Sciences

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036; Krasnoyarsk, 660036

A. Masyugin

Siberian State University of Science and Technology

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660014

A. Aleksandrovskii

Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences; Siberian Federal University

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036; Krasnoyarsk, 660041

T. Smolyarova

Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences; Siberian Federal University

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036; Krasnoyarsk, 660041

I. Nemtsev

Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036

S. Lyashchenko

Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036

G. Bondarenko

Institute of Chemistry and Chemical Technology, Krasnoyarsk Scientific Center, Siberian Branch,
Russian Academy of Sciences

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660036

E. Tambasova

Siberian State University of Science and Technology

Email: tambasov_igor@mail.ru
Rússia, Krasnoyarsk, 660014

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