Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition

I. A. Tambasov; M. N. Volochaev; A. S. Voronin; N. P. Evsevskaya; A. N. Masyugin; A. S. Aleksandrovskii; T. E. Smolyarova; I. V. Nemtsev; S. A. Lyashchenko; G. N. Bondarenko; E. V. Tambasova

doi:10.1134/S1063783419100354

Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition

Authors: Tambasov I.A.¹, Volochaev M.N.¹, Voronin A.S.², Evsevskaya N.P.¹^,3, Masyugin A.N.⁴, Aleksandrovskii A.S.¹^,5, Smolyarova T.E.²^,5, Nemtsev I.V.¹, Lyashchenko S.A.¹, Bondarenko G.N.³, Tambasova E.V.⁴
Affiliations:
1. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
2. Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
3. Institute of Chemistry and Chemical Technology, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
4. Siberian State University of Science and Technology
5. Siberian Federal University
Issue: Vol 61, No 10 (2019)
Pages: 1904-1909
Section: Physics of Surface and Thin Films
URL: https://ogarev-online.ru/1063-7834/article/view/206382
DOI: https://doi.org/10.1134/S1063783419100354
ID: 206382

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Abstract

Aluminum-doped zinc oxide thin films have been grown by atomic layer deposition at a temperature of 200°C. Using X-ray diffraction, it has been established that the ZnO:Al thin films exhibits the reflections from the (100), (002), (110), and (201) ZnO hexagonal phase planes. The (101) and (102) planes have also been detected by electron diffraction. The ZnO:Al thin films grow smooth with a root-mean-square roughness of R_q = 0.33 nm and characteristic nanocrystallite sizes of ~70 and ~15 nm without additional aluminum or aluminum oxide phases. The transmission at a wavelength of 550 nm with regard to the substrate has been found to be 96%. The refractive indices and absorption coefficients of the ZnO:Al thin films in the wavelength range of 250–900 nm have been determined. The maximum refractive indices and absorption coefficients have been found to be 2.09 at a wavelength of 335 nm and 0.39 at a wavelength of 295 nm, respectively. The optical band gap is 3.56 eV. The resistivity, Seebeck coefficient, and power factor of the ZnO:Al thin films are ∼1.02 × 10^–3 Ω cm, –60 μV/K, and 340 μW m^–1 K^–2 at room temperature, respectively. The maximum power factor attains 620 μW m^–1 K^–2 at a temperature of 200°C.

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atomic layer deposition, thin films, aluminum-doped zinc oxide, structural and optical properties, thermoelectric properties

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Structural, Optical, and Thermoelectric Properties of the ZnO:Al Films Synthesized by Atomic Layer Deposition

Full Text

Abstract

Keywords

About the authors

Supplementary files