GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

S. N. Rodin; W. V. Lundin; A. F. Tsatsulnikov; A. V. Sakharov; S. O. Usov; M. I. Mitrofanov; I. V. Levitskii; V. P. Evtikhiev; M. A. Kaliteevski

doi:10.1134/S106378341912045X

GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

Авторлар: Rodin S.N.¹, Lundin W.V.¹, Tsatsulnikov A.F.², Sakharov A.V.¹, Usov S.O.², Mitrofanov M.I.¹, Levitskii I.V.¹, Evtikhiev V.P.¹, Kaliteevski M.A.³
Мекемелер:
1. Ioffe Institute
2. Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences
3. ITMO University
Шығарылым: Том 61, № 12 (2019)
Беттер: 2335-2337
Бөлім: Semiconductors
URL: https://ogarev-online.ru/1063-7834/article/view/206858
DOI: https://doi.org/10.1134/S106378341912045X
ID: 206858

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Аннотация

A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.