Thin-Film InxAlyGa1 – x – yAszSb1 – z/GaSb Heterostructures Grown in a Temperature Gradient
- Авторлар: Lunina M.L.1, Lunin L.S.1, Kalinchuk V.V.1, Kazakova A.E.1
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Мекемелер:
- Southern Scientific Center
- Шығарылым: Том 60, № 5 (2018)
- Беттер: 890-898
- Бөлім: Semiconductors
- URL: https://ogarev-online.ru/1063-7834/article/view/202815
- DOI: https://doi.org/10.1134/S1063783418050177
- ID: 202815
Дәйексөз келтіру
Аннотация
The thin-film InxAlyGa1 – x – yAszSb1 – z/GaSb heterostructures have been grown from liquid phase in a temperature gradient. The growth kinetics, the composition, the structural perfection, and the luminescence properties of the InAlGaAsSb thin films grown on a GaSb substrate have been studied.
Авторлар туралы
M. Lunina
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 334006
L. Lunin
Southern Scientific Center
Хат алмасуға жауапты Автор.
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 334006
V. Kalinchuk
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 334006
A. Kazakova
Southern Scientific Center
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 334006
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