Thin-Film In  x  Al  y  Ga 1 –  x  –  y  As  z  Sb 1 –  z  /GaSb Heterostructures Grown in a Temperature Gradient

M. L. Lunina; L. S. Lunin; V. V. Kalinchuk; A. E. Kazakova

doi:10.1134/S1063783418050177

Thin-Film In_xAl_yGa_{1 – x – y}As_zSb_{1 – z}/GaSb Heterostructures Grown in a Temperature Gradient

作者: Lunina M.L.¹, Lunin L.S.¹, Kalinchuk V.V.¹, Kazakova A.E.¹
隶属关系:
1. Southern Scientific Center
期: 卷 60, 编号 5 (2018)
页面: 890-898
栏目: Semiconductors
URL: https://ogarev-online.ru/1063-7834/article/view/202815
DOI: https://doi.org/10.1134/S1063783418050177
ID: 202815

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详细

The thin-film In_xAl_yGa_{1 – x – y}As_zSb_{1 – z}/GaSb heterostructures have been grown from liquid phase in a temperature gradient. The growth kinetics, the composition, the structural perfection, and the luminescence properties of the InAlGaAsSb thin films grown on a GaSb substrate have been studied.