Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO2 substrates by DC magnetron sputtering
- 作者: Dzhumaliev A.S.1,2, Nikulin Y.V.1,2, Filimonov Y.A.1,2,3
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch)
- Chernyshevsky Saratov State University
- Gagarin State Technical University of Saratov
- 期: 卷 58, 编号 5 (2016)
- 页面: 1053-1057
- 栏目: Surface Physics and Thin Films
- URL: https://ogarev-online.ru/1063-7834/article/view/197608
- DOI: https://doi.org/10.1134/S1063783416050073
- ID: 197608
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详细
The effect of substrate temperature Tsub and bias voltage Ubias on the texture of NiFe films with thickness d ∼ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO2 substrates under working gas pressure ∼ 0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded (Ubias ∼ 0) substrate heated to Tsub ∼ 440–640 K results in the formation of textured NiFe(200) films.
作者简介
A. Dzhumaliev
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch); Chernyshevsky Saratov State University
编辑信件的主要联系方式.
Email: dzhas@yandex.ru
俄罗斯联邦, ul. Zelenaya 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012
Yu. Nikulin
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch); Chernyshevsky Saratov State University
Email: dzhas@yandex.ru
俄罗斯联邦, ul. Zelenaya 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012
Yu. Filimonov
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch); Chernyshevsky Saratov State University; Gagarin State Technical University of Saratov
Email: dzhas@yandex.ru
俄罗斯联邦, ul. Zelenaya 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012; ul. Politekhnicheskaya 77, Saratov, 410054
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